FR-F720-45K MITSUBISHI Gate Module
Item NO.:
FR-F720-45K MITSUBISHIGoods Stock:
3Payment:
T/TProduct Origin:
JapanColor:
NewShipping Port:
ChinaLead Time:
2-3daysWeight:
0.55kgBrand:
MITSUBISHIFR-F720-45K MITSUBISHI Gate Module
Product Description:
The Mitsubishi Gate Module is a high-performance driver component specifically engineered to interface between control logic circuits and high-power semiconductors, such as IGBTs (Insulated Gate Bipolar Transistors) or IPMs (Intelligent Power Modules). These modules act as the "muscle" for the "brain" of a power system, ensuring that switching signals are amplified correctly while providing essential electrical isolation.
The specific parameters of a Mitsubishi Gate Module vary by series, but they generally adhere to the following technical standards:
Supply Voltage: Typically operates on a dual or single power supply ranging from 15V to 24V DC.
Peak Output Current: Designed to provide high instantaneous current (often 2A to 8A) to rapidly charge and discharge the gate capacitance of power devices.
Isolation Voltage: Features high dielectric strength, often rated between 2500V and 4000V AC for one minute to protect low-voltage control circuitry.
Switching Frequency: Optimized for high-frequency operation, frequently supporting ranges from 10 kHz up to 50 kHz depending on the load.
Propagation Delay: Minimal signal latency, usually measured in nanoseconds, to ensure precise timing in complex inverter topologies.
Operating Temperature: Robust thermal performance, typically rated for environments between -20°C and +85°C.
Integrated Protection Features
These modules are not just signal boosters; they include built-in safeguards like Short Circuit Protection and Under-Voltage Lockout (UVLO). If the supply voltage drops too low, the module automatically shuts down to prevent the IGBT from operating in an unstable linear region.
High Noise Immunity
Mitsubishi utilizes advanced optocouplers or magnetic isolation technology to ensure that the high-frequency electromagnetic interference (EMI) generated by power switching does not corrupt the control signals.
Compact and Simplified Design
By integrating the gate drive circuit into a single module, engineers can significantly reduce the physical footprint of the PCB and shorten the development cycle compared to building a discrete driver circuit.
Perfect Matching
Because Mitsubishi manufactures both the gate drivers and the IGBTs, these modules are factory-tuned to match the gate charge characteristics of Mitsubishi power semiconductors, ensuring optimal efficiency and minimal switching losses.
Proper Decoupling
It is essential to place high-quality ceramic capacitors as close as possible to the power supply pins of the gate module. This minimizes voltage ripples caused by the high peak currents during switching.
Gate Resistor Selection
While the module provides the drive, the external gate resistor ($R_{g}$) must be calculated carefully. A value that is too low can cause excessive oscillation (ringing), while a value that is too high increases switching losses and heat.
Dead-Time Management
Users must ensure that the controller provides sufficient "dead-time" between the turn-off of one switch and the turn-on of another in a bridge configuration to prevent a catastrophic "shoot-through" short circuit.
Thermal Path
Even though gate modules are efficient, they do generate heat during high-frequency operation. Ensure adequate airflow or heat sinking if the module is used near its maximum frequency or current ratings.
The structure and details of the product:

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Warranty: one year
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